Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Properties of epitaxial graphene grown on C-face SiC compared to Si-face

Effects of aluminum on epitaxial graphene grown on C-face SiC

Tunable photoresponse of epitaxial graphene on SiC

We report photoresponse measurements from two comparable epitaxial graphene (EG) devices of different thicknesses (2-layer vs. 10-layer EG) made on SiC substrates. An asymmetric metal contact scheme was used in a planar configuration to form a Ti/EG/Pd junction. By moving the laser illumination across the junction, we observed an increased photocurrent signal resulting from local enhancement of...

Stacking of adjacent graphene layers grown on C-face SiC

Controllable growth of vertically aligned graphene on C-face SiC

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as...